System and method for a voltage controlled oscillator

ABSTRACT

In accordance with an embodiment, a voltage controlled oscillator (VCO) includes a VCO core having a plurality of transistors and a varactor circuit that has a first end coupled to emitter terminals of the VCO core and a second end coupled to a tuning terminal. The varactor circuit includes a capacitance that increases with increasing voltage applied to the tuning terminal with respect to the emitter terminals of the VCO core.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. Non-Provisional applicationSer. No. 14/592,415, filed on Jan. 8, 2015, and issued on Oct. 4, 2016as U.S. Pat. No. 9,461,583, which application is hereby incorporatedherein by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates generally to an electronic device, andmore particularly to a system and method for a voltage controlledoscillator (VCO).

BACKGROUND

Applications in the millimeter-wave frequency regime have gainedsignificant interest in the past few years due to the rapid advancementin low cost semiconductor technologies such as silicon germanium (SiGe)and fine geometry complementary metal-oxide semiconductor (CMOS)processes. Availability of high-speed bipolar and metal-oxidesemiconductor (MOS) transistors has led to a growing demand forintegrated circuits for mm-wave applications at 60 GHz, 77 GHz, and 80GHz and also beyond 100 GHz. Such applications include, for example,automotive radar and multi-gigabit communication systems.

In some radar systems, the distance between the radar and a target isdetermined by transmitting a frequency modulated signal, receiving areflection of the frequency modulated signal, and determining a distancebased on a time delay and/or frequency difference between thetransmission and reception of the frequency modulated signal.Resolution, accuracy and sensitivity of the radar system may depend, inpart, on the phase noise performance and frequency agility of theradar's frequency generation circuitry, which generally includes an RFoscillator and circuitry that controls the frequency of the RFoscillator.

As the operating frequencies of RF systems continue to increase,however, the generation of signals at such high frequencies poses amajor challenge. Oscillators that operate at high frequencies may sufferfrom a poor phase noise performance that caused by 1/f and thermal noisein the devices that comprise the VCO.

SUMMARY

In accordance with an embodiment, a voltage controlled oscillator (VCO)includes a VCO core having a plurality of transistors and a varactorcircuit that has a first end coupled to emitter terminals of the VCOcore and a second end coupled to a tuning terminal. The varactor circuitincludes a capacitance that increases with increasing voltage applied tothe tuning terminal with respect to the emitter terminals of the VCOcore.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 includes FIGS. 1a and 1b that illustrate the operation of anexample automotive radar system, FIG. 1c that illustrates a schematic ofa conventional VCO, FIG. 1d that illustrate the performance of theconventional VCO, and FIGS. 1e and 1f that block diagrams of embodimentfrequency generation systems;

FIG. 2 illustrates a schematic of an embodiment VCO;

FIG. 3 illustrates a schematic of another embodiment VCO;

FIG. 4 illustrates a schematic of a further embodiment VCO;

FIG. 5 illustrates a frequency versus tuning voltage graph for anembodiment VCO;

FIG. 6 illustrates a block diagram of an embodiment method; and

FIG. 7 illustrates an embodiment radar system.

Corresponding numerals and symbols in different figures generally referto corresponding parts unless otherwise indicated. The figures are drawnto clearly illustrate the relevant aspects of the preferred embodimentsand are not necessarily drawn to scale. To more clearly illustratecertain embodiments, a letter indicating variations of the samestructure, material, or process step may follow a figure number.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

The present invention will be described with respect to preferredembodiments in a specific context, a system and method for a radarsystem, such as an automotive radar system. The invention may also beapplied to other systems and applications that use RF oscillators, suchas general radar systems and wireless communications systems.

In embodiments of the present invention, the tuning characteristic ofthe VCO is arranged such that the frequency of the VCO decreases withincreasing voltage applied to a varactor circuit of the VCO. Byarranging the tuning characteristic of the VCO such that that the VCOdecreases with increasing voltage, the region in which the VCO operateswith the lowest Kvco and lowest phase noise corresponds with a low orminimum voltage. Accordingly, embodiment VCOs may operate highperformance and low noise regions of operation with low controlvoltages. Such embodiments, for example, are suitable for operation insystems having low supply voltages.

FIG. 1a illustrates an example automotive radar scenario 100 in whichautomobile 102 has automotive radar system 104. Automotive radar system104 transmits and receives, for example, a frequency modulatedcontinuous wave (FMCW) signal, and detects reflections of thistransmitted signal in order to determine a distance between automotiveradar system 104 and other vehicles or objects on the road. In theillustrated scenario, a large vehicle 106, such as a truck is closer toautomobile 102 then a small vehicle 108, such as a motorcycle. Undernormal operating conditions, the echo or reflection off large vehicle106 will be of a higher amplitude then the reflection off small vehicle108 because large vehicle 106 is both larger and closer than smallvehicle 108.

FIG. 1b illustrates a graph 120 of received signal level versus receivedfrequency for the scenario of FIG. 1a . Signal level versus frequencycurve 122 corresponds to the received reflection from large vehicle 106and the frequency f1 of signal level peak 130 corresponds to thedistance between automotive radar system 104 and large vehicle 106.Likewise, signal level versus frequency curve 126 corresponds to thereceived reflection from small vehicle 108 and the frequency F2 of thesignal level peak 132 corresponds to the distance between automotiveradar system 104 and small vehicle 108. Accordingly, the distancebetween large vehicle 106 and small vehicle 108 is proportional to theseparation between frequencies F1 and F2.

Along with the desired output signal, the phase noise of the radartransmitter is also transmitted and reflected. The phase noise reflectedfrom large vehicle 106 is represented as dashed line 124. As seen ingraph 120, phase noise 124 affects the ability of the radar to receivesignals reflected from small vehicle 108. The signal to noise ratiobetween signal level peak 132 due to small vehicle 108 and thecorresponding noise floor due to phase noise reflected from largevehicle 106 is represented as length 134. It can be seen from the graphof FIG. 1B, that phase noise affects the ability of automotive radarsystem 104 to discern small and distant objects. The higher the phasenoise of the radar transmitter, the less the radar system is able todiscern small and distant objects.

FIG. 1c illustrates conventional VCO 150 according to a “push-push”architecture. VCO includes VCO core 151 having transistors 153 andinductors 154, matching networks 152, varactors 158 and current source160. Transistors 153 are biased according to bias voltage Vbias, and thecapacitance of varactor 158 are tuned according to tuning voltage Vtune.The frequency of oscillation of VCO 150 is approximately:

${f_{OSC} = \frac{1}{2\pi\sqrt{L_{154}C_{158}}}},$where L₁₅₄ is the inductance of inductor 154 and C₁₅₈ is the capacitanceof varactor 158. The output of VCO 150 is taken a Vout, which providesan output frequency of twice f_(OSC).

Varactor 158 may be implemented as a diode capacitance that is inverselyproportional to the voltage applied across its terminals. As shown,tuning voltage Vtune is coupled to the cathode of the varactor diodesthat make up varactor 158. As the tuning voltage Vtune increases withrespect to ground, the varactor diode becomes increasingly reversed biasand there is a corresponding decrease in the capacitance of varactor158. This decrease in capacitance with respect to applied voltage may bedue to the increase of the width of the depletion region in the reversedbias diode as the voltage across the diode increases. Since thefrequency of oscillation f_(OSC) of VCO 150 is inversely proportional toC₁₅₈ is the capacitance of varactor 158, the frequency of oscillationf_(OSC) increases with a corresponding increase in tuning voltage Vtune.

An example relationship between the oscillation frequency f_(OSC) withrespect to tuning voltage Vtune is shown as curve 170 in FIG. 1d . Alsoshown in FIG. 1d is curve 172 that represents VCO gain Kvco with respectto Vtune and curve 174 that represents phase noise PNssb with respect toVtune. As shown, phase noise PNssb decreases as the applied tuningvoltage Vtune increases and VCO gain Kvco decreases.

Because the region of best phase noise performance corresponds to higherapplied Vtune voltages, it may be challenging to design a low voltagesystem that utilizes such a VCO. For example, if the particular lowvoltage system, such as a PLL, is constrained to only deliver a tuningvoltage between about 0.2 V and about 2.0 V, the system may not be ableto operate the VCO in the lowest phase noise regions of operation. Thismay pose system design challenges in ensuring that the available tuningvoltage range maps to the specified output frequency range that hassufficient phase noise performance.

FIG. 1e illustrates a block diagram of an embodiment RF system 180having front-end circuit 182 that includes RF oscillator 184 that has itfrequency controlled by digital-to-analog converter (DAC) 187 inmicrocontroller unit (MCU) 188. As shown, front-end circuit 182 may beimplemented in a separate package and/or on a separate integratedcircuit die as MCU 188. In one embodiment, front-end circuit 182 may beimplemented in a high performance RF process that implements RFtransistors such as SiGe HPTs, and other types of transistors. MCU 188,on the other hand, may be implemented using a fine geometry CMOSprocess. In an embodiment, front-end circuit 182 may include a furtherDAC 186 to drive an additional tuning port. In some embodiments, themaximum power supply voltage that may be applied to MCU 188 is limitedby the particular semiconductor process in which MCU 188 is fabricated.In some cases, this maximum power supply voltages may be about 1.2 V,however, different semiconductor processes may be able to toleratedifferent maximum supply voltages. In one example, the usable tuningvoltage range that may be supplied by DAC may be between about 0.2 V andabout 1 V. This tuning range may be modified using, for example, levelshifter circuit 185.

In an embodiment, MCU 188 may be used to implement a digital and/orsoftware-based PLL in addition to performing other functions for theparticular RF system being implemented. Software PLLs may be used inembodiment radar or communication systems to take advantage of the lowerphase noise at higher offset frequencies (i.e., 1 MHz offset) for a freerunning VCO compared to a PLL.

In accordance with a further embodiment, both the RF front-end circuit182, as well as the MCU functions of the system may be implemented on asingle MCU integrated circuit 190 as shown in FIG. 1f . MCU integratedcircuit includes DACs 186 and 187 for tuning oscillator 184.

In an embodiment, the tuning characteristic of the VCO is inverted suchthat lower tuning voltages correspond to regions of operation havinglower phase noise. FIG. 2 illustrates embodiment VCO 200 having such astuning characteristic. As shown, VCO 200 includes VCO core 202, varactorcircuit 204 containing varactors 230, and bias circuit 210 and voltagereference circuit 260. VCO core 202 includes transistors 212, capacitors214 and transmission line elements 216. Transmission line elements 216,as well as other transmission line element used in VCO 200, may beimplemented using microstrip structures and/or other transmission linestructures known in the art. In an embodiment, VCO is configured tooscillate at a frequency between about 5 GHz and about 40 GHz, forexample, about 20 GHz. However, in alternative embodiments, otheroscillation frequency ranges may be used. Transmission line elements 216are sized in order to produce an inductive impedance at the bases oftransistors 212. Bias voltages to the bases of transistors 212 areprovided by bias circuit 210 that is coupled to VCC via transmissionline element 222. In an embodiment, transmission line element 222 issized to be a quarter wavelength at twice the frequency of oscillationof the VCO 200. In some embodiments, bias voltage VBIAS is filtered viabias filtering network 207 having transmission line element 240 andcapacitor 242. In some embodiments, transmission line element 240 has aquarter wavelength of about four times the oscillation frequency of VCO200.

The collectors of transistors 212 are coupled to VCC via transmissionline elements 218, feedback resistor 220 and transmission line element222. In an embodiment, transmission line elements 218 are sized in orderto maximize the signal swing. Feedback resistor 220, in someembodiments, mitigates the self-bias effect of high VCO amplitudesdistorting the tuning curve of varactors 230 as described in U.S. patentapplication Ser. No. 14/041,931 filed on Sep. 30, 2013, whichapplication incorporated herein by reference in its entirety. In someembodiments, the resistance of feedback resistor is between about 5Ω andabout 10Ω for a bias current of about 20 mA. Alternatively, biascurrents and other resistance values for feedback resistor 220 may beused.

Varactor circuit 204 includes varactor elements 230, AC couplingcapacitors 228, series transmission line elements 232, and RF chokecircuits that include transmission line element 234. In someembodiments, a bias voltage is provided to the varactor circuit viatransmission element 234. Node 235 that provides this bias voltage maybe referred to as a varactor reference terminal. As shown, the anodes ofvaractor elements 230 are coupled to tuning voltage Vtune. In someembodiments, tuning voltage V_(TUNE) is filtered via bias filteringnetwork 208 having transmission line element 244 and capacitor 246. Insome embodiments, transmission line element 240 has a quarter wavelengthof about four times the oscillation frequency of VCO 200. Thecombination of each RF choke circuit and transmission line element 232may form an inductive voltage divider. In an embodiment, AC couplingcapacitors 228 allow varactors 230 to be biased based on applied tuningvoltage Vtune and reference voltage Vn1. Series transmission lineelements 232 and AC coupling capacitors 228 form a series resonantcircuit that allows the fundamental frequency of oscillator pass tovaractors while attenuating the harmonics of VCO 200. In someembodiments, series transmission line elements 232 may be implementedusing a transmission line having a length of about 400μ in one example.In another example, the length of series transmission line elements 232may be between about 100μ and about 500μ. It should be understood,however, that the length of series transmission line elements 232 may beoutside of this range depending on the embodiment and its particularspecifications. In some alternative embodiments, series transmissionline elements 232 may be implemented using an inductive element.

In an embodiment, the RF choke circuit that includes transmission lineelements 234, 236 and capacitor 238 produces a high impedance to theemitters of transistors 212 at about twice the oscillation frequency ofVCO 200, and provides a lower impedance at other harmonics of theoscillation frequency. By providing a lower impedance to oscillationharmonics via series transmission line element 232 and the RF chokecircuit, phase noise may be improved because of reduced non-linearbehavior of the varactor.

Voltage reference circuit 260 provides a bias voltage to the cathode ofvaractors 230. In an embodiment, voltage reference circuit 260 includesresistor 268 coupled to VCC via transmission line element 222 and diodes262, 264 and 266. In alternative embodiments of the present invention,voltage reference circuit 260 may include greater or fewer than thethree diodes 262, 264 and 266 depicted in FIG. 2. In an embodiment, thevoltage across diodes 262, 264 and 266 define the voltage range ofVtune. For example, the VCO 200 may have a tuning voltage range ofbetween about 0V and about three diode drops. If diodes 262, 264 and 266are silicon diodes having a forward voltage of about 0.7V, the inputtuning voltage range is between 0 V and about 2.1V.

In an embodiment, sensitivity of the varactor capacitance to powersupply voltage VCC is reduced as a function of using resistor 268. Forexample, as the power supply VCC decreases, the current through resistor268 decreases, thereby causing a corresponding decrease in the voltageacross resistor 268. This reduction in voltage across resistor 268reduces attenuates the decrease in voltage seen across varactor 230.

Output V_(OUT) of VCO 200 is coupled to the emitters of transistors 212via transmission line elements 224 and 226 that isolate the VCO corefrom the output, thereby forcing the fundamental signal of the VCO toremain in the VCO core. Thus, the output frequency of VCO 200 is twicethe oscillation frequency of the VCO core. This also improves thequality factor of the resonator and leads to better phase noiseperformance. The tail current for transistors 212 is provided bytransmission line element 248 and bias resistor 250. In an embodiment,transmission line element 248 has a quarter wavelength at twice thefrequency of oscillation of VCO 200.

It should be understood that, in some embodiments, the sizing oftransmission elements within VCO 200 may vary from the lengths andcorresponding wavelengths described above depending on the particularembodiment and its specifications.

FIG. 3 illustrates VCO 270 according to a further embodiment of thepresent invention. VCO 270 is similar to VCO 200 shown in FIG. 2, withthe exception that the cathodes of varactors 230 are referenced usinglow dropout voltage regulator (LDO) 272 instead of voltage referencecircuit 260. LDO 272 may be implemented, for example, using low dropoutvoltage regulators known in the art, for example, a linear regulatorusing a series pass transistor. Alternatively, other known voltageregulator circuits may be used. In some embodiments, LDO 272 isimplemented using low noise circuitry. LDO 272 may be implemented on asame integrated circuit as VCO 270 or may be implemented external to VCO270 in some embodiments.

FIG. 4 illustrates VCO 280 according to another embodiment of thepresent invention. VCO 280 is similar to VCO 270 shown in FIG. 3, withthe exception that LDO 282 is coupled between VCC and transmission lineelement 222. As shown, the cathodes of varactors 230 are connected totransmission line element 222 via the RF choke circuits implemented bytransmission elements 234. In embodiments, LDO 282 may be implemented onthe same integrated circuit as VCO 280 or external to the integratedcircuit on which VCO 280 is disposed.

FIG. 5 illustrates a plot of oscillation frequency with respect toapplied tuning voltage Vtune for an embodiment VCO. As shown, theoscillation frequency decreases as the applied tuning voltage Vtuneincreases. In the particular tuning curve shown, an oscillationfrequency range about 60.25 GHz to about 65.25 GHz may be tuned with anapplied tuning voltage of between about 0.5 V and about 2.5 V. In manyembodiments, this voltage range is supported using DACs implemented invarious standard CMOS semiconductor processes.

FIG. 6 illustrates a block diagram 400 of an embodiment method ofoperating an embodiment VCO that includes a VCO core having a pluralityof transistors and a varactor circuit having a first end coupled toemitter terminals of the VCO core and a second end coupled to a tuningterminal. As discussed according to embodiments herein, the varactorcircuit includes a capacitance that increases with increasing voltageapplied to the tuning terminal with respect to the emitter terminals ofthe VCO core.

In step 402, the frequency of the VCO is increased by decreasing avoltage applied to the tuning terminal with respect to the emitterterminals of the VCO core. In step 404, the frequency of the VCO isdecreased by increasing the voltage applied to the tuning terminal withrespect to the emitter terminals of the VCO core. By performing steps402 and 404 the frequency of oscillation may be tuned. In embodiment,step 402 in which the frequency of the VCO is increased by decreasingthe tuning voltage of the VCO allows the VCO to operate in a lower phasenoise region of operation.

FIG. 5 illustrates single-chip radar transmission system 500 thatincludes upconverter 502, power amplifier 504 and frequency generationcircuit 506. As shown, upconverter 502 upconverts baseband signal BB toa higher frequency signal, which is then amplified by power amplifier504 and output on pin OUT. In some embodiments, baseband signal BB maybe a swept frequency or other signal type used in a radar system.Frequency generation circuit 506 produces local oscillator signal LObased on a reference frequency on pin REF that may be generated using,for example, a crystal oscillator. In an embodiment, frequencygeneration circuit 506 is implemented using a phase locked loop (PLL)having phase detector 512, loop filter 510, VCO 508 and divider 514. VCO508 may be implemented using embodiment VCOs described herein. In someembodiments, the function of phase detector 512, loop filter 510 may beperformed digitally using digital circuits and systems known in the art,as well as using analog circuitry. For example, these functions may beimplemented using custom digital logic, standard cell digital logic,and/or may be implemented in software running on a processor,microcontroller or digital signal processor. Such processors mayinclude, for example, a processor core, memory coupled to the processorcore and one or more input/output ports. Alternatively, other circuitsand systems known in the art may be used to implement these functions.It should be appreciated that system 500 is just one of many examples ofembodiment systems that may utilize embodiment oscillators. Alternativesystems may include, for example, wireless and wire line communicationsystems, and other systems that use VCOs.

In accordance with an embodiment, a voltage controlled oscillator (VCO)includes a VCO core having a plurality of transistors and a varactorcircuit that has a first end coupled to emitter terminals of the VCOcore and a second end coupled to a tuning terminal. The varactor circuitincludes a capacitance that increases with increasing voltage applied tothe tuning terminal with respect to the emitter terminals of the VCOcore.

Implementations may include one or more of the following features. In anembodiment, the varactor circuit includes: a first capacitor having afirst terminal coupled to a first of the emitter terminals of the VCOcore; a first varactor diode having a cathode coupled to a secondterminal of the first capacitor and an anode coupled to the tuningterminal; and an RF choke circuit coupled between a second terminal ofthe first capacitor and a varactor reference terminal. The VCO mayfurther include a voltage reference circuit coupled to the varactorreference terminal. In some embodiments, the voltage reference circuitincludes: a resistor coupled between a first reference terminal and thevaractor reference terminal, where the first reference terminal iscoupled to collector terminals of the VCO core; and a diode coupledbetween the varactor reference terminal and a second reference terminal.This diode may include a plurality of diodes and/or the second referenceterminal may be a ground terminal.

In an embodiment, the voltage reference circuit includes a voltageregulator coupled between the varactor reference terminal and a firstreference terminal. The voltage regulator may include, for example, alow dropout (LDO) voltage regulator. The first reference terminal may becoupled to collector terminals of the VCO core and/or the collectorterminals of the VCO core may be coupled to the varactor referenceterminal. The varactor reference terminal may be coupled to thecollector terminals of the VCO core via a second resistor.

In some embodiments, the VCO includes an output node coupled to theemitter terminals of the VCO core. The VCO may have a frequency ofoperation between about 10 GHz and about 30 GHz.

In accordance with a further embodiment, a VCO includes a VCO corehaving a plurality of transistors and a varactor circuit coupled toemitter terminals of the VCO core. The varactor circuit includes a firstcapacitor having a first terminal coupled to a first of the emitterterminals of the VCO core, a first transmission line element having afirst terminal coupled to a second terminal of the first capacitor, afirst varactor diode having a cathode coupled to the second terminal ofthe first transmission line element, an anode coupled to a tuningterminal, and an RF choke circuit coupled between a second terminal ofthe first capacitor and a varactor reference terminal. The VCO furtherincludes a feedback resistor coupled between a first reference terminaland the VCO core and a voltage reference circuit having an output nodecoupled to the varactor reference terminal.

Implementations may include one or more of the following features. Thevoltage reference circuit includes: a first resistor coupled between thefirst reference terminal and the varactor reference terminal; and atleast one diode coupled between the varactor reference terminal and asecond reference terminal. The VCO may further include a bias resistorcoupled between the emitter terminals of the VCO core and the secondreference terminal.

In some embodiments, the voltage reference circuit includes a voltageregulator, which may be coupled between the first reference terminal andthe varactor reference terminal. In some implementations, the voltageregulator is coupled between the first reference terminal and thefeedback resistor, and the varactor reference terminal is coupled to thefeedback resistor.

In accordance with another embodiment, a method of operating a VCOincludes increasing a frequency of the VCO by decreasing a voltageapplied to a tuning terminal with respect to emitter terminals of theVCO core; and decreasing the frequency of the VCO by increasing thevoltage applied to the tuning terminal with respect to the emitterterminals of the VCO core. The VCO includes a VCO core that includes aplurality of transistors and a varactor circuit having a first endcoupled to emitter terminals of the VCO core and a second end coupled toa tuning terminal, where the varactor circuit includes a capacitancethat increases with increasing voltage applied to the tuning terminalwith respect to the emitter terminals of the VCO core.

Implementations may include one or more of the following features. Themethod where the varactor circuit includes a first capacitor having afirst terminal coupled to a first of the emitter terminals of the VCOcore, a first varactor diode having a cathode coupled to a secondterminal of the first capacitor and an anode coupled to the tuningterminal, and an RF choke circuit coupled between a second terminal ofthe first capacitor and a varactor reference terminal. In someembodiments, the method further includes biasing the varactor referenceterminal. Biasing the varactor reference terminal may include applyingan output of a voltage reference circuit to the varactor referenceterminal.

Advantages of embodiments of the present invention include ability togenerate a frequency having very low phase noise. A further advantageincludes, for example, a wide VCO tuning range.

While this invention has been described with reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription.

What is claimed is:
 1. A voltage controlled oscillator (VCO) comprising:a VCO core comprising a plurality of transistors; a varactor circuithaving a first end coupled to emitter terminals of the VCO core and asecond end coupled to a tuning terminal, wherein the varactor circuitcomprises a capacitance that increases with increasing voltage appliedto the tuning terminal with respect to the emitter terminals of the VCOcore, the varactor circuit comprising a first capacitor having a firstterminal coupled to a first of the emitter terminals of the VCO core, afirst varactor diode having a cathode coupled to a second terminal ofthe first capacitor and an anode coupled to the tuning terminal, and anRF choke circuit coupled between a second terminal of the firstcapacitor and a varactor reference terminal; and an output node coupledto the emitter terminals of the VCO core.
 2. The VCO of claim 1, furthercomprising a voltage reference circuit coupled to the first end of thevaractor circuit.
 3. The VCO of claim 1, wherein collector terminals ofthe VCO core are coupled to the first end of the varactor circuit. 4.The VCO of claim 3, wherein the first end of the varactor circuit iscoupled to the collector terminals of the VCO core via a secondresistor.
 5. A voltage controlled oscillator (VCO) comprising: a VCOcore comprising a plurality of transistors; and a varactor circuithaving a first end coupled to emitter terminals of the VCO core and asecond end coupled to a tuning terminal, wherein the varactor circuitcomprises: a first capacitor having a first terminal coupled to a firstof the emitter terminals of the VCO core, a first varactor diode havinga cathode coupled to a second terminal of the first capacitor and ananode coupled to the tuning terminal, and an RF choke circuit coupledbetween a second terminal of the first capacitor and a varactorreference terminal.
 6. The VCO of claim 5, further comprising a voltagereference circuit coupled to the varactor reference terminal.
 7. The VCOof claim 6, wherein the voltage reference circuit comprises: a resistorcoupled between a first reference terminal and the varactor referenceterminal, wherein the first reference terminal is coupled to collectorterminals of the VCO core; and a second diode coupled between thevaractor reference terminal and a second reference terminal.
 8. The VCOof claim 7, wherein the second diode comprises a plurality of diodes. 9.The VCO of claim 7, wherein the second reference terminal is a groundterminal.
 10. The VCO of claim 6, wherein the voltage reference circuitcomprises a voltage regulator coupled between the varactor referenceterminal and a first reference terminal.
 11. The VCO of claim 10,wherein the voltage regulator comprises a low dropout (LDO) voltageregulator.
 12. The VCO of claim 10, wherein the first reference terminalis coupled to collector terminals of the VCO core.
 13. The VCO of claim10, wherein collector terminals of the VCO core are coupled to thevaractor reference terminal.
 14. The VCO of claim 13, wherein thevaractor reference terminal is coupled to the collector terminals of theVCO core via resistor.
 15. The VCO of claim 5, wherein the VCO comprisesan output node coupled to the emitter terminals of the VCO core.
 16. TheVCO of claim 5, wherein the VCO comprises a frequency of operationbetween about 10 GHz and about 30 GHz.
 17. A method of operating avoltage controlled oscillator (VCO) comprising a VCO core having aplurality of transistors and a varactor circuit having a first endcoupled to emitter terminals of the VCO core and a second end coupled toa tuning terminal, wherein the varactor circuit comprises a firstcapacitor having a first terminal coupled to a first of the emitterterminals of the VCO core, a first varactor diode having a cathodecoupled to a second terminal of the first capacitor and an anode coupledto the tuning terminal, and an RF choke circuit coupled between a secondterminal of the first capacitor and a varactor reference terminal, themethod comprising: increasing a frequency of the VCO by decreasing avoltage applied to the tuning terminal with respect to the emitterterminals of the VCO core; and decreasing the frequency of the VCO byincreasing the voltage applied to the tuning terminal with respect tothe emitter terminals of the VCO core.
 18. The method of claim 17,further comprising biasing the varactor reference terminal.
 19. Themethod of claim 18, wherein biasing the varactor reference terminalcomprises applying an output of a voltage reference circuit to thevaractor reference terminal.